Ferroelectric memory and capacitor structure thereof

ABSTRACT

A selected ferroelectric memory cell of a ferroelectric memory is electrically connected to a first bit line, a second bit line, a first word line, a second word line and a plate line. The selected ferroelectric memory cell includes a first field effect transistor (“FET”), a second FET and a ferroelectric capacitor. A control terminal and a first access terminal of the first FET are electrically connected to the first word line and the first bit line, respectively. A control terminal and a first access terminal of the second FET are electrically connected to the second word line and the second bit line, respectively. A second access terminal of the first FET is electrically connected to a first capacitor electrode of the ferroelectric capacitor and a second access terminal of the second FET. A second capacitor electrode of the ferroelectric capacitor is electrically connected to the plate line.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a divisional application claiming benefit from a pending U.S. Patent Application bearing a Ser. No. 15/942,599 and filed Apr. 2, 2018, contents of which are incorporated herein for reference.

TECHNICAL FIELD

The present disclosure relates to the field of a ferroelectric memory, and particularly to a structure and a capacitor of the ferroelectric memory.

BACKGROUND

With development of ferroelectric materials, the idea of applying a ferroelectric field effect transistor (FeFET) to a dynamic random-access memory has been proposed in some references, e.g. in U.S. Pat. No. 6,067,244. However, there are many drawbacks in the techniques addressed by the references. One of the drawbacks is that it is difficult to synthesize a ferroelectric material and a Si substrate. Furthermore, some ferroelectric materials also require thicker ferroelectric layers (e.g. larger than 200 nm) for enabling desired characteristics. Therefore, it is very hard for current techniques to scale down FeFETs, fabrication processes of the FeFETs are also difficult, and cost of the FeFETs is high. Although ferroelectric materials doped with hafnium dioxide (HfO₂) is proposed to scale down the FeFETs in recent references, the HfO₂ concentration is extremely low (about 3-5%), and it is difficult to control the doping uniformity across a wafer.

Moreover, many problems still exist in application of FeFETs. For example, the data stored in a FeFET may be easily affected when the FeFET is biased with one half of a programming voltage Vpp (the programming voltage Vpp represents the voltage required for programming a memory cell). One current solution is proposed as follows. During program operation (e.g. write “1”), unselected memory cells connected to the selected word line (WL) or the selected bit line (BL) are biased to 2/3 Vpp, and other unselected word lines are biased to 1/3 Vpp. During erase operation (e.g. write “0”), unselected memory cells connected to the selected word line or the selected bit line are biased with 1/3 Vpp, and other unselected word lines are biased to 2/3 Vpp. This method can reduce possibility of affecting the data stored in the memory cells.

Therefore, in summary, drawbacks still exist in the current techniques. To the area of ferroelectric technology, a new ferroelectric memory structure and the operation method thereof become objects which all parties are actively studying.

SUMMARY

An aspect of the present disclosure provides a ferroelectric memory including a plurality of ferroelectric memory cells. A selected ferroelectric memory cell is electrically connected to a first bit line, a second bit line, a first word line, a second word line and a plate line. The selected ferroelectric memory cell includes a first field effect transistor (FET), a second field effect transistor (FET) and a ferroelectric capacitor. Each of the first FET and the second FET includes a control terminal, a first access terminal and a second access terminal. The ferroelectric capacitor includes a first capacitor electrode and a second capacitor electrode. The control terminal and the first access terminal of the first FET are respectively electrically connected to the first word line and the first bit line, the second access terminal of the first FET is electrically connected to the first capacitor electrode of the ferroelectric capacitor and the second access terminal of the second FET, the second capacitor electrode of the ferroelectric capacitor is electrically connected to a plate line, the control terminal and the first access terminal of the second FET are respectively electrically connected to the second word line and the second bit line.

Another aspect of the present disclosure provides a capacitor structure. The capacitor structure includes a first capacitor electrode, a dielectric layer and a second capacitor electrode. The second capacitor electrode includes a pillar structure. The dielectric layer covers a lateral surface and a bottom surface of the second capacitor electrode. A top surface of the second capacitor electrode is exposed from an upper opening of the dielectric layer. The dielectric layer further includes a flange neighboring with the upper opening and extending along a direction away from the second capacitor electrode. The first capacitor electrode covers a lateral surface and a bottom surface of the dielectric layer. The flange of the dielectric layer covers a top surface of the first capacitor electrode.

BRIEF DESCRIPTION OF THE DRAWINGS

The advantages of the present disclosure will become more readily apparent to those ordinarily skilled in the art after reviewing the following detailed description and accompanying drawings, in which:

FIG. 1 is a circuit diagram illustrating a portion of a ferroelectric memory according to an embodiment of the present disclosure;

FIG. 2 is a circuit diagram illustrating a portion of a ferroelectric memory according to another embodiment of the present disclosure;

FIG. 3 is a circuit diagram illustrating a portion of a ferroelectric memory according to a further embodiment of the present disclosure;

FIG. 4 is a timing diagram of a data writing method of the ferroelectric memory of FIG. 1 according to an embodiment of the present disclosure;

FIG. 5 is a timing diagram of a data reading method of the ferroelectric memory of FIG. 1 according to an embodiment of the present disclosure;

FIG. 6A is a timing diagram of a data writing method of the ferroelectric memory of FIG. 2 according to an embodiment of the present disclosure;

FIG. 6B is a timing diagram of a data writing method of the ferroelectric memory of FIG. 2 according to another embodiment of the present disclosure;

FIG. 7A is a timing diagram of a data reading method of the ferroelectric memory of FIG. 2 according to an embodiment of the present disclosure;

FIG. 7B is a timing diagram of a data reading method of the ferroelectric memory of FIG. 2 according to another embodiment of the present disclosure;

FIG. 8 is a timing diagram of a data reading method of the ferroelectric memory of FIG. 3 according to an embodiment of the present disclosure;

FIG. 9A˜FIG. 9E are schematic diagrams illustrating a manufacturing method of the ferroelectric memory according an embodiment of the present disclosure;

FIG. 10A˜FIG 10C are top views illustrating a portion of an array structure corresponding to FIG. 9B, FIG. 9C and FIG. 9E;

FIG. 10D is a top view illustrating another configuration of the plate line;

FIG. 11A˜FIG 11F are schematic diagrams illustrating the manufacturing method of a ferroelectric memory according another embodiment of the present disclosure;

FIG. 12A and FIG. 12B are top views illustrating a portion of an array structure corresponding to FIG. 11B and FIG. 11C;

FIG. 13 is a side cross-sectional view illustrating a capacitor structure according to an embodiment of the present disclosure;

FIG. 14 is a schematic diagram illustrating the composition of the ferroelectric layer serving as the dielectric layer of the ferroelectric capacitor according to an embodiment of the present disclosure;

FIG. 15 is a schematic diagram illustrating the composition of the ferroelectric layer serving as the dielectric layer of the ferroelectric capacitor according to another embodiment of the present disclosure;

FIG. 16A and FIG. 16B are schematic diagrams illustrating the composition of the ferroelectric layer serving as the dielectric layer of the ferroelectric capacitor according to further embodiments of the present disclosure;

FIG. 17 is a schematic diagram illustrating a manufacturing method of the capacitor structure according to an embodiment of the present disclosure;

FIG. 18A and FIG. 18B are schematic diagrams illustrating the composition of the para-electric layer in FIG. 17 according to embodiments of the present disclosure;

FIG. 19 is a schematic diagram illustrating the composition of the ferroelectric layer in FIG. 17 according to an embodiment of the present disclosure;

FIG. 20 is a schematic diagram illustrating the composition of the ferroelectric layer in FIG. 17 according to another embodiment of the present disclosure; and

FIG. 21A and FIG. 21B are schematic diagrams illustrating the composition of the ferroelectric layer in FIG. 17 according to further embodiments of the present disclosure.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The present disclosure will now be described more specifically with reference to the following embodiments. It is to be noted that the following descriptions of preferred embodiments of this invention are presented herein for purpose of illustration and description only. It is not intended to be exhaustive or to be limited to the precise form disclosed.

Please refer to FIG. 1, a circuit diagram illustrating a portion of a ferroelectric memory according to an embodiment of the present disclosure. The ferroelectric memory 10 includes a plurality of ferroelectric memory cells (e.g. 100, 102, 110), each of which includes a field effect transistor (FET) and a ferroelectric capacitor. Each ferroelectric memory cell is electrically connected to one of the bit lines (e.g. BL(1)˜BL(4)), one of the word lines (e.g. WL(1)˜WL(4)) and one of the plate lines (e.g. PL(1)˜PL(2)). Taking the ferroelectric memory cell 110 as an example, it includes an FET T and a ferroelectric capacitor C. The control terminal 120 of the FET T is electrically connected to the word line WL(2), one access terminal 122 of the FET T is electrically connected to the bit line BL(1), and the other access terminal 124 of the FET T is electrically connected to one capacitor electrode 130 of the ferroelectric capacitor C. The other capacitor electrode 132 is electrically connected to the plate line PL(1). Each ferroelectric memory cell in the array has a circuit structure similar to that of the ferroelectric memory cell 110, the only difference between any two of the ferroelectric memory cells is that the bit lines, the word lines and the plate lines electrically connected to the corresponding ferroelectric memory cells are different, and thus we shall not repeat detail description of each ferroelectric memory cell again.

In another embodiment, two adjacent ferroelectric memory cells 100 in FIG. 1 are considered as one ferroelectric memory cell for data reading/writing operation. Please refer to FIG. 2, a circuit diagram illustrating a portion of a ferroelectric memory according to another embodiment of the present disclosure. The circuit of the ferroelectric memory 20 is identical to that of the ferroelectric memory 10. However, in operation, each ferroelectric memory cell 200 includes a pair of ferroelectric memory cells 100 (e.g. left part 100L and right part 100R) as shown in FIG. 1. The specific circuit connection is the same as that shown in FIG. 1 and will not be described again here.

Please refer to FIG. 3, a circuit diagram illustrating a portion of a ferroelectric memory according to a further embodiment of the present disclosure. In the embodiment, the ferroelectric memory 30 includes a plurality of ferroelectric memory cells 300. One ferroelectric memory cell 300 marked in the figure is taken as an example and includes two FETs T1, T2 and one ferroelectric capacitor C. The control terminal 310 of the FET T1 is electrically connected to the word line WLw(1), one access terminal 312 of the FET T1 is electrically connected to the bit line BL(2), and the other access terminal 314 of the FET T1 is electrically connected to one capacitor electrode 320 of the ferroelectric capacitor C. The other capacitor electrode 322 of the ferroelectric capacitor C is electrically connected to the plate line PL(2). The control terminal 330 of the FET T2 is electrically connected to the word line WLr(1), one access terminal 332 of the FET T2 is electrically connected to the capacitor electrode 320, and the other access terminal 334 of the FET T2 is electrically connected to the bit line BL(3). Generally speaking, each ferroelectric memory cell in this embodiment includes two FETs and one ferroelectric capacitor, and the FETs are electrically connected to distinct word lines, distinct bit lines and one corresponding plate line.

Data writing methods and data reading methods of the ferroelectric memories in the above embodiments are described in the following paragraphs.

Please refer to both FIG. 1 and FIG. 4, wherein FIG. 4 is a timing diagram of a data writing method of the ferroelectric memory of FIG. 1 according to an embodiment of the present disclosure. Taking the ferroelectric memory cell 110 in FIG. 1 as an example again, while writing the data into the ferroelectric memory cell 110, the signal S_PL is provided to the plate line PL(1), the signal S_WL is provided to the word line WL(2), and the write signal S_BL corresponding to the data to be written and stored into the ferroelectric memory cell 110 is provided to the bit line BL(1). The voltage level of the signal S_PL provided to the plate line PL(1) during the first time period P1 is different from that outside the first time period Pl. The voltage level of the signal S_WL during the second time period P2 is different from that outside the second time period P2. The first time period P1 entirely covers the second time period P2. In other words, the whole second time period P2 is inside the first time period P1. The voltage level of the signal S_PL is constant during the first time period P1.

In this embodiment, the write signal S_BL corresponding to the data to be written and stored into the ferroelectric memory cell 110 may have several possible voltage levels. If the data to be written into the ferroelectric memory cell 110 is logic “1”, the write signal S_BL is set to have a specified data write level, e.g. (3/2)*Vdd (Vdd is the potential difference between two capacitor electrodes of the capacitor C, required for programming the ferroelectric capacitor C to another storage state). On the contrary, If the data to be written into the ferroelectric memory cell 110 is logic “0”, the write signal S_BL is set to have another specified data write level, e.g. −(1/2)*Vdd. Furthermore, after the specified data write level is applied and before the end of the second time period P2, the voltage level of the bit line BL(1) may be adjusted to a default voltage level (e.g. GND) falling between the two specified data write levels (e.g. (3/2)*Vdd and (−1/2)*Vdd) so as to retain the polarization of the ferroelectric capacitor C.

Concretely, to start the data writing operation, at the beginning of the first time period P1, the voltage level of the plate line PL(1) is adjusted to (1/2)*Vdd, and the voltage level of the bit line BL(1) is adjusted to one of the above-mentioned specified data write levels according to the data to be written into the ferroelectric memory cell 110. Then, after the second time period P2 starts, the voltage level of the word line WL(2) is adjusted to be sufficient to switch on the FET T. Hence, the voltage level of the bit line BL(1) is transferred to the capacitor electrode 130 through the FET T. The potential difference between the capacitor electrodes 130 and 132 (i.e. the voltage level of the plate line PL(1)) affects the electric potential stored by the ferroelectric capacitor C. Moreover, the voltage level of the plate line PL(1) is kept constant. Thus, the electric potential supplied to the bit line BL(1) determines the electric potential stored in the ferroelectric capacitor C (equal to the data content stored in the ferroelectric capacitor C).

In this embodiment, after a period of time for writing data into the ferroelectric capacitor C, the voltage level of the bit line BL(1) is adjusted to the default voltage level. It is to be noted that the voltage difference between the default voltage level and the voltage level of the plate line PL(1)) should not be sufficient for changing the programmed state of the ferroelectric capacitor C, so that the data stored in the ferroelectric capacitor C will not be affected. Subsequently, once the second time period P2 ends, the signal S_WL provided to the word line WL(2) is adjusted to switch off the FET T. Lastly, after the first time period P1 ends, the voltage level of the signal S_PL provided to the plate line PL(1) is adjusted to be close to the voltage level of the bit line BL(1) (e.g. GND) to prevent from disturbing the data stored in the ferroelectric capacitor C.

After the above steps, the data is successfully and properly written into the ferroelectric capacitor C of the ferroelectric memory cell 110.

Please refer to both FIG. 1 and FIG. 5, wherein FIG. 5 is a timing diagram of a data reading method of the ferroelectric memory of FIG. 1 according to an embodiment of the present disclosure. Taking the ferroelectric memory cell 110 in FIG. 1 as an example, while reading the data from the ferroelectric memory cell 110, the signal S_PL is provided to the plate line PL(1), and the signal S_WL is provided to the word line WL(2). Then, the voltage level of the bit line BL(1) is affected by the data stored in the ferroelectric capacitor C of the ferroelectric memory cell 110 and changes to form a data signal. By comparing the data signal and a reference level, the data content represented by the data signal may be known according to the relation between the data signal and the reference level. Hence, the data stored in the ferroelectric memory cell 110 is obtained and output. Lastly, because the voltage level stored by the ferroelectric capacitor C may be changed during the aforementioned data reading operation, it needs to utilize the data writing method of FIG. 4 to rewrite the identical data into the ferroelectric capacitor C of the ferroelectric memory cell 110 after obtaining the data content represented by the data signal according to the relation between the data signal and the reference level. It is to be noted that the voltage level of the signal S_PL during the first time period P1 is different from that outside the first time period P1. The voltage level of the signal S_WL during the second time period P2 is different from that outside the second time period P2. The first time period P1 entirely covers the second time period P2. The voltage level of the signal S_PL is constant during the first time period P1.

Specifically, while reading the data from the ferroelectric memory cell 110, the voltage level of the signal S_PL provided to the plate line PL(1) is adjusted to (1/2)*Vdd at the beginning of the first time period P1 and kept constant during the whole first time period P1. Then, the voltage level of the signal S_WL provided to the word line WL(2) is adjusted to be sufficient to switch on the FET T of the ferroelectric memory cell 110 during the second time period P2. At the same time, along with switching-on of the FET T, the voltage level of the ferroelectric capacitor C starts to affect the voltage level of the BL(1). In this embodiment, it is assumed that the voltage level of the ferroelectric capacitor C is high represents logic “1” and that the voltage level of the ferroelectric capacitor C is low represents logic “0”. Thus, when the FET T is switched on, the ferroelectric capacitor C with stored logic “1” changes the voltage level of the bit line BL(1) to V1. On the contrary, when the FET T is switched on, the ferroelectric capacitor C with stored logic “0” changes the voltage level of the bit line BL(1) to V0. The values of V1 and V0 relate to the electric potential difference Vdd for programming the ferroelectric capacitor C, the current capacitance of the ferroelectric capacitor C and the capacitance of the bit line BL(1), which is well known by persons skilled in the art and shall not be recited anymore.

In this embodiment, after the FET T is switched on for a period, a voltage sensing amplifier (not shown) is activated at the time point SA to judge the relation between the voltage level of the bit line BL(1) and the reference level Vref, so as to confirm whether the voltage level (data signal) of the bit line BL(1) represents logic “0” or logic “1”. In this embodiment, the reference level Vref may be an average of the voltage levels V1 and V0. If the data signal is greater than the reference level Vref, the data signal represents logic “1”. On the contrary, if the data signal is smaller than the reference level Vref, the data signal represents logic “0”.After the content of the data signal is determined, the content of the data signal is output and viewed as the data stored in the ferroelectric memory cell 110.

After obtaining the content represented by the data signal, the technique provided in the embodiment is used to write the data into the ferroelectric capacitor C of the ferroelectric memory cell 110 again. In other words, if the content of the data signal represents logic “1”, the voltage level of the data signal provided to the bit line BL(1) is adjusted to a specified data write level, e.g. (3/2)*Vdd, to program the ferroelectric capacitor C again to the voltage level representing logic “1” through the potential difference between the voltage levels of the bit line BL(1) and the plate line PL(1). On the contrary, if the content of the data signal represents logic “0”, the voltage level of the data signal provided to the bit line BL(1) is adjusted to the other specified data write level, e.g. (−1/2)*Vdd, to program the ferroelectric capacitor C again to the voltage level representing logic “0” through the potential difference between the voltage levels of the bit line BL(1) and the plate line PL(1).

After the data is written into the ferroelectric capacitor C again, the second time period P2 ends. While the second time period P2 ends, the voltage level of the signal S_WL provided to the word line WL(2) starts falling till the voltage level of the signal S_WL provided to the word line WL(2) is insufficient to keep switching on the FET T. Meanwhile, the voltage level of the data signal S_BL on the bit line BL(1) is adjusted to the default voltage level other than and falling between the two specified data write levels. Lastly, the first time period P1 ends, and the voltage level of the signal S_PL provided to the plate line PL(1) is adjusted to the voltage level which is identical to the voltage level before the first time period P1 begins. Thus, the data reading method is finished.

It is to be noted that the data writing operation performed on the ferroelectric memory cell 110 after the time point SA may refer to the timing diagram of FIG. 4 without affecting the normal operation of the technique provided by the disclosure.

Please refer to both FIG. 2 and FIG. 6A, wherein FIG. 6A is a timing diagram of a data writing method of the ferroelectric memory in FIG. 2 according to an embodiment of the present disclosure. Taking the ferroelectric memory cell 200 in FIG. 2 as an example, the signal S_WL indicates the timing sequence of the voltage levels of the word line WL(2), the signal S_PL indicates the timing sequence of the voltage levels of the plate line PL(1), the signal S_BL indicates the timing sequence of the voltage levels of the bit line BL(1), and the signal S_BLB indicates the timing sequence of the voltage levels of the bit line BLB(1). In this embodiment, the criterion for judging the content stored in the ferroelectric memory cell 200 is the arrangement of the content stored in the ferroelectric memory cell 100L at the left side (the left part 100L) and the content stored in the ferroelectric memory cell 100R at the right side (the right part 100R) within the ferroelectric memory cell 200. For example, if the content stored in the left part 100L of the ferroelectric memory cell 200 is logic “1” or a relatively higher voltage level, and the content stored in the right part 100R of the ferroelectric memory cell 200 is logic “0” or a relatively lower voltage level, it is deemed that the content stored in the ferroelectric memory cell 200 is logic “1”.Under this condition, if the content stored in the left part 100L of the ferroelectric memory cell 200 is logic “0” or a relatively lower voltage level and the content stored in the right part 100R of the ferroelectric memory cell 200 is logic “1” or a relatively higher voltage level, it is deemed that the content stored in the ferroelectric memory cell 200 is logic “0”. Alternatively, the content stored in the ferroelectric memory cell 200 may be determined according to an opposite scenario. For example, if the content stored in the left part 100L of the ferroelectric memory cell 200 is logic “1” or a relatively higher voltage level and the content stored in the right part 100R of the ferroelectric memory cell 200 is logic “0” or a relatively lower voltage level, it is deemed that the content stored in the ferroelectric memory cell 200 is logic “0”.Under this condition, if the content stored in the left part 100L of the ferroelectric memory cell 200 is logic “0” or a relatively lower voltage level and the content stored in the right part 100R of the ferroelectric memory cell 200 is logic “1” or a relatively higher voltage level, it is deemed that the content stored in the ferroelectric memory cell 200 is logic “1”.

No matter which scenario is adopted, it has to write opposite data into the left part 100L and the right part 100R of the ferroelectric memory cell 200 during the process of writing data into the ferroelectric memory cell 200. Referring to FIG. 6A, the signal S_BL, the signal S_WL and the signal S_PL are used for writing data into the right part 100R of the ferroelectric memory cell 200, while the signal S_BLB, the signal S_WL and the signal S_PL are used for writing data into the left part 100L of the ferroelectric memory cell 200. In the data writing method as shown in FIG. 6A, data writing operation of any pair of the left part 100L and the right part 100R is extremely similar to that shown in FIG. 4. Although the time point of the rising edge or the falling edge of the signal S_BL or the signal S_BLB in FIG. 4 may be different from that as shown in FIG. 6A, it won't affect result of operation of FIG. 6A. In other words, the data writing method of FIG. 4 is slight different from the data writing method of FIG. 6A in the timing, the specific operation principle does not change. Therefore, the operation procedure of FIG. 6A may be derived from directly referring to the description with reference to FIG. 4 together with making slight modifications, and repetitious details are not given here.

Please refer to both FIG. 2 and FIG. 6B, wherein FIG. 6B is a timing diagram of a data writing method of the ferroelectric memory of FIG. 2 according to another embodiment of the present disclosure. Similar to FIG. 6A, the signal S_BL, the signal S_WL and the signal S_PL are used for writing data into the right part 100R of the ferroelectric memory cell 200, while the signal S_BLB, the signal S_WL and the signal S_PL are used for writing data into the left part 100L of the ferroelectric memory cell 200. The method of FIG. 6A differs from the method of FIG. 6B in that the timing of the potential change of the signal S_BL in FIG. 6B is the same as the timing of the potential change of the signal S_BLB in FIG. 6A, and the timing of the potential change of the signal S_BLB in FIG. 6B is the same as the timing of the potential change of the signal S_BL in FIG. 6A. Hence, the data writing method in connection with FIG. 6B also accords with the description with reference to FIG. 4, and repetitious details are not given here.

From another perspective, the data writing method with reference to FIG. 4 may be used to drive each of the left part 100L and the right part 100R of the ferroelectric memory cell 200 in FIG. 5, provided one point must be noted, that is, the left part 100L and the right part 100R have to be written with opposite data.

Please refer to FIG. 2, FIG. 7A and FIG. 7B. FIG. 7A is a timing diagram of a data reading method of the ferroelectric memory of FIG. 2 according to an embodiment of the present disclosure, and FIG. 7B is a timing diagram of a data reading method of the ferroelectric memory of FIG. 2 according to another embodiment of the present disclosure. Taking the ferroelectric memory cell 200 in FIG. 2 as an example, the signal S_WL indicates the timing sequence of the voltage levels of the word line WL(2), the signal S_PL indicates the timing sequence of the voltage levels of the plate line PL(1), the signal S_BL indicates the timing sequence of the voltage levels of the bit line BL(1), and the signal S_BLB indicates the timing sequence of the voltage levels of the bit line BLB(1). The signal S_BL, the signal S_WL and the signal S_PL are used for data writing/reading operation of the right part 100R of the ferroelectric memory cell 200, while the signal S_BLB, the signal S_WL and the signal S_PL are used for data writing/reading operation of the left part 100L of the ferroelectric memory cell 200. In the embodiment, the criterion for judging the content stored in the ferroelectric memory cell 200 is the arrangement of the content stored in the left part 100L and the content stored in the right part 100R. The related description has been given above, and repetitious details are not given here.

In the data reading methods of FIG. 7A and FIG. 7B, the data reading operation of any of the left part 100L and the right part 100R is the same as that of the counterpart described with reference to FIG. 5. Therefore, the operation procedures and principles in connection with FIG. 7A and FIG. 7B may be known by referring to the description with reference to FIG. 5, and repetitious details are not given here.

Please refer to both FIG. 3 and FIG. 8, wherein FIG. 8 is a timing diagram of a data reading method of the ferroelectric memory of FIG. 3 according to an embodiment of the present disclosure. Taking the ferroelectric memory cell 300 in FIG. 3 as an example, while reading the data stored in the ferroelectric memory cell 300, the voltage level of the signal S_PL is raised to a higher level (e.g. (1/2)*Vdd) at the beginning of the first time period P1 and provided to the plate line PL(2). Then, the voltage level of the signal S_WLr provided to the word line WLr(1) is adjusted to be sufficient to switch on the FET T2 of the ferroelectric memory cell 300 during the second time period P2. At this time, because of switching-on of the FET T2, the voltage level stored in the ferroelectric capacitor C within the ferroelectric memory cell 300 will affect the voltage level of the data signal S_BLr on the bit line BL(3) via the FET T2. As described above, the voltage level of the data signal S_BLr changes with the data stored in the ferroelectric capacitor C. Therefore, the data stored in the ferroelectric capacitor C can be determined by sampling the data signal S_BLr during the time period P2. The related techniques may be known from aforementioned embodiments and shall not be recited again here. After sampling the data signal S_BLr, the second time period P2 ends, and the voltage level of the data signal S_BLr is adjusted to the voltage level before being subjected to affection of the ferroelectric capacitor C. The signal S_WLr is also adjusted to a level incapable of switching on the FET T2.

As described above, reading data from the ferroelectric capacitor C may deteriorate the data stored in the ferroelectric capacitor C. Therefore, in the embodiment, after the second time period P2, the voltage level of the signal S_WLw provided to the word line WLw(1) is adjusted to be sufficient to switch on the FET T1 of the ferroelectric memory cell 300 during a third time period P3. Also, the voltage level of the data signal S_BLw provided to the bit line BL(2) is adjusted according to the type of the known data stored in the ferroelectric capacitor C during the third time period P3. Therefore, the voltage level on the bit line BL(2) is applied to the capacitor electrode 320 via the conductive FET T1, and the ferroelectric capacitor C is written with the data again. After writing the ferroelectric capacitor C with the data again, the third time period P3 ends. Once the third time period P3 ends, the voltage level of the data signal S_BLw is adjusted to the original voltage level, and the voltage level of the signal S_WLw is adjusted to switch off the FET T1.

By above method, the data stored in the ferroelectric memory cell 300 can be properly read out, and the original data is guaranteed unchanged.

Furthermore, if one would like to write data into a ferroelectric memory cell, it only needs to perform the aforementioned operations during the first and third periods for achieving his objective. The only thing which needs to be noted is that the data signal S_BLw is adjusted according to the data to be written into the ferroelectric memory cell 300 regardless of the originally stored data.

It is to be noted that the transistors in the above embodiments are illustrated by taking as field effect transistors, but it would suffice to use transistors without ferroelectric characteristics, such as non-ferroelectric transistors or non-ferroelectric FETs.

A manufacturing method of the ferroelectric memory 10 having an array structure as shown in FIG. 1 is described below. Please refer to FIG. 9A˜FIG 9E, schematic diagrams illustrating a manufacturing method of the ferroelectric memory according to an embodiment of the present disclosure. Only two ferroelectric memory cells 100 are shown in the drawing, but the ferroelectric memory 10 includes multiple ferroelectric memory cells 100 arranged in an array. Referring to the top view of the substrate shown in FIG. 10A, the schematic diagrams of FIG. 9A˜FIG. 9E are side views viewed from the line A-A to the right. The column direction and the row direction in the embodiments are defined based on FIG. 10A˜FIG. 10C.

As shown in FIG. 9A, at first, a semiconductor substrate 50 is provided. The semiconductor substrate 50 may be made of a known semiconductor material, e.g. silicon (Si). Shallow trench isolation (STI) is used to dispose one or more dielectric materials (e.g. silicon dioxide (SiO₂)) in trenches to form isolation regions 50 c in the semiconductor substrate 50 to isolate and define active areas 50 b where the FETs 52 will be formed (FIG. 10A). The active areas 50 b may be optionally doped with a material of a first conductivity type.

Then, a first dielectric layer 51 and a word line WL are piled up (stacked) and formed over an upper surface 50 a of a designated area 501 of the semiconductor substrate 50. The first dielectric layer 51 may optionally include a gate insulation layer 51 a and/or a high-k dielectric layer 51 b. This step may include sub-steps of: depositing an insulation layer (e.g. made of SiO₂ or silicon oxynitride (SiON)) and/or a high-k dielectric film and an electrode layer (e.g. made of titanium nitride (TiN), tantalum nitride (TaN), tungsten nitride (WN), wolfram (W), iridium (Ir), ruthenium (Ru), ruthenium oxide (RuOx), platinum (Pt), palladium (Pd) or other conductive material) in sequence; and patterning the piled deposition layers with a hard shield so that the remained deposition layers on the designated area 501 of the semiconductor substrate 50 form the gate insulation layer 51 a and/or the high-k dielectric layer 51 b and the word line WL. It is to be noted that the present disclosure is not limited to use the sub-steps. The shield may also be called as a mask or a mask plate. In the array structure, the ferroelectric memory cells in the same row (FIG. 10A) connect to a common word line WL. In other words, the word line WL extends along the row direction.

Subsequently, as shown in FIG. 9B, a source/drain doping step is performed by using the word line WL as the mask. Doping of a material of the second conductivity type is performed on the upper surface 50 a of the semiconductor substrate 50. Major carriers of the material of the first conductivity type are opposite to major carriers of the second conductivity type. For example, if the material of the first conductivity type comprises p-type dopants, the material of the second conductivity type comprises n-type dopants, and vice verse. In this embodiment, an n-type dopant usable in the source/drain doping step may be, for example, arsenic (As) or phosphorus (P), and the doping concentration ranges form 5×10¹⁹cm⁻³ to 2×10²¹cm⁻³. Thus, in the active area 50 b of the semiconductor substrate 50, a first doped region 52 a and a second doped region 52 b are formed in the vicinity of the designated area 501 and near the upper surface 50 a of the semiconductor substrate 50. A high temperature annealing process may be performed at a temperature ranging from 850° C. to 1050° C. to active the dopants in each doped region. The doped regions 52 a and 52 b do not extend to the semiconductor substrate 50 underneath the first dielectric layer 51 in the drawings. However, it is applicable to use tilt-doping or thermal diffusion to extend the doped regions 52 a and 52 b to the semiconductor substrate 50 underneath the first dielectric layer 51. At this time, the top view of a part of the array in the resultant structure is shown in FIG. 10A. The FET 52 includes the first dielectric layer 51, the word line WL, the first doped region 52 a, the second doped region 52 b and the designated area 501 of the semiconductor substrate 50.

Then, as shown in FIG. 9C, a first interconnect 53 a and a second interconnect 53 b are formed over and electrically connected to the first doped region 52 a and the second doped region 52 b, respectively. FIG. 10B shows the top view of the structure at this moment. In the same column of the ferroelectric memory cells, the first interconnects 53 a and the second interconnects 53 b are staggered to prevent from contacting each other. The interconnects may be formed separately, concurrently, or partially concurrently. The disclosure does not limit the order of forming the interconnects, and one may make a plan in consideration of the process requirement, the minimal production cost or the shortest production time.

Subsequently, as shown in FIG. 9D, a bit line BL is formed to electrically connect the first interconnect 53 a. The ferroelectric memory cells in the same column connect to a common bit line BL. In other words, the bit line BL extends along the column direction. Then, as shown in FIG. 9E, a ferroelectric capacitor 55 is formed. The ferroelectric capacitor 55 includes a first capacitor electrode 551, a second capacitor electrode 552 and a second dielectric layer 553 which separates the first capacitor electrode 551 from the second capacitor electrode 552. The first capacitor electrode 551 is electrically connected to the second interconnect 53 b. In order to facilitate forming of the ferroelectric capacitor 55, a landing pad 54 may be optionally provided between the first capacitor electrode 551 of the ferroelectric capacitor 55 and the second interconnect 53 b so as to have the landing pad 54 electrically connect to the first capacitor electrode 551 and the second interconnect 53 b as well as pad the position for forming the ferroelectric capacitor 55. For example, an upper surface of the landing pad 54 is higher than or flush with an upper surface of the bit line BL. The disclosure does not limit the order of forming the bit line BL and the landing pad 54, the bit line BL and the landing pad 54 may be formed separately or concurrently, and one may make a plan in consideration of the process requirement, the minimal production cost or the shortest production time. Lastly, a plate line PL is formed to electrically connect the second capacitor electrode 552 of the ferroelectric capacitor 55. The ferroelectric memory cells in the same row connect to a common plate line PL. In other words, the plate line PL extends along the row direction (FIG. 10C). Thus, the ferroelectric memory 10 having the array structure as shown in FIG. 1 is finished. The ferroelectric memory 10 includes an array of the ferroelectric memory cells 100. After the above steps, associated processes of back-end-of-line (BEOL) can be performed.

In terms of the array structure of FIG. 1, two ferroelectric capacitors 55 which are adjacent to each other in the column direction share a common plate line PL between them. FIG. 10C illustrates one configuration wherein one plate line PL covers the second capacitor electrodes 552 of two rows of the ferroelectric capacitors 55. The present disclosure is not limited to this configuration, and it is only required that one plate line PL should be electrically connected to the second capacitor electrodes 552 of two rows of the ferroelectric capacitors 55. For example, the plate line PL in FIG. 10C may be divided into two parallel strips for receiving the same signal S_PL, and each of the strips covers the second capacitor electrodes of one row of the ferroelectric capacitors. Or it is also feasible to use a two-layer plate line PL, just like that shown in FIG. 10D. For illustrative purposes, only one plate line PL and several ferroelectric capacitors 55 are shown, and other elements are omitted. First, each of multiple first conductive strips 571 is electrically connected to the second capacitor electrodes 552 of two adjacent ferroelectric capacitors 55 in the same column. Then, a second conductive strip 572 is electrically connected to the first conductive strips 571. Therefore, the second capacitor electrodes 552 of two adjacent rows of the ferroelectric capacitors 55 are electrically connected together. The plurality of first conductive strips 571 and the second conductive strip 572 constitute the plate line PL.

This manufacturing method may be used to finish the array structure of the ferroelectric memory 20 show in FIG. 2. In FIG. 10C, two adjacent ferroelectric memory cells 100 in the same row are deemed as one ferroelectric memory cell 200, multiple ferroelectric memory cell 200 arranged in an array then constitute the ferroelectric memory 20, and the manufacturing method of the ferroelectric memory 20 is not described in details again.

The structure, materials and manufacturing methods of the ferroelectric capacitors in this embodiments and the following embodiments will be described later after the description of the manufacturing methods of the ferroelectric memories.

A manufacturing method of the ferroelectric memory 30 having an array structure as shown in FIG. 3 is given now. Please refer to FIG. 11A˜FIG 11F, schematic diagrams illustrating a manufacturing method of the ferroelectric memory according to an embodiment of the present disclosure. Only one complete ferroelectric memory cell 300 is shown in the drawings, but the ferroelectric memory 30 includes multiple ferroelectric memory cells 300 arranged in an array. Referring to the top view of the substrate in FIG. 12A, the schematic diagrams of FIG. 11A˜FIG. 11E are side views viewed from the line B-B to the right. The column direction and the row direction in the embodiments are defined based on FIG. 12A and FIG. 12B.

As shown in FIG. 11A, at first, a semiconductor substrate 60 is provided. The semiconductor substrate 60 may be made of a known semiconductor material, e.g. Si. Shallow trench isolation is used to dispose one or more dielectric materials (e.g. SiO₂) in trenches to form isolation regions 60 c in the semiconductor substrate 60 to isolate and define active areas 60 b where the FETs will be formed (FIG. 12A). The active areas 60 b may be optionally doped with a material of a first conductivity type.

Then, a first dielectric layer 611 and a first word line WLr are piled up and formed over an upper surface 60 a of a first area 601 of the semiconductor substrate 60. The first dielectric layer 611 may optionally include a gate insulation layer 611 a and/or a high-k dielectric layer 611 b. Meanwhile, a third dielectric layer 612 and a second word line WLw are piled up and formed over the upper surface 60 a of a second area 602 of the semiconductor substrate 60. The third dielectric layer 612 may optionally include a gate insulation layer 612 a and/or a high-k dielectric layer 611 b. This step may include sub-steps of: depositing insulation layers (e.g. made of SiO₂ or SiON) and/or high-k dielectric films and electrode layers (e.g. made of TiN, TaN, WN, W, Ir, Ru, RuOx, Pt, Pd or other conductive material) in sequence; and patterning the piled deposition layers with hard shields so that the remained deposition layers on the areas 601, 602 of the semiconductor substrate 60 form the gate insulation layers 611 a, 612 a and/or the high-k dielectric layers 611 b, 612 b and the word lines WLr, WLw. However, the present disclosure is not limited to the above sub-steps. In the array structure, the ferroelectric memory cells in the same row connect to a common first word line WLr, and the ferroelectric memory cells in the same row connect to a common second word line WLw (FIG. 12A). In other words, the first word line WLr and the second word line WLw extend along the row direction.

Subsequently, as shown in FIG. 11B, a source/drain doping step is performed by using the first word line WLr and the second word line WLw as the masks. Doping of a material of the second conductivity type is performed on the upper surface 60 a of the semiconductor substrate 60. Major carriers of the material of the first conductivity type are opposite to major carriers of the material of the second conductivity type. For example, if the material of the first conductivity type comprises p-type dopants, the material of the second conductivity type comprises n-type dopants, and vice verse. In this embodiment, an n-type dopant usable in the source/drain doping step may be, for example, As or P, and the doping concentration ranges form 5×10¹⁹cm⁻³ to 2×10²¹cm⁻³. Thus, in the active area 60 b of the semiconductor substrate 60, a first doped region 62 a is formed on the left of the first area 601 and near the upper surface 60 a of the semiconductor substrate 60, a second doped region 62 b is formed between the first area 601 and the second area 602 and near the upper surface 60 a of the semiconductor substrate 60, and a third doped region 62 c is formed on the right of the second area 602 and near the upper surface 60 a of the semiconductor substrate 60. A high temperature annealing process may be performed at a temperature ranging from 850° C. to 1050° C. to active the dopants in the doped regions 62 a, 62 b and 62 c. The doped regions 62 a, 62 b and 62 c do not extend to the semiconductor substrate 60 underneath the first dielectric layer 611 and the second dielectric layer 612 in the drawings. However, it is applicable to use tilt-doping or thermal diffusion to extend the doped regions 62 a, 62 b and 62 c to the semiconductor substrate 60 underneath the first dielectric layer 611 and the second dielectric layer 612. At this time, the top view of a part of the array in the resultant structure is shown in FIG. 12B. The first FET includes the first dielectric layer 611, the first word line WLr, the first doped region 62 a, the second doped region 62 b and the first area 601 of the semiconductor substrate 60. The second FET includes the third dielectric layer 612, the second word line WLw, the second doped region 62 b, the third doped region 62 c and the second area 602 of the semiconductor substrate 60.

Then, as shown in FIG. 11C, a first interconnect 63 a and a third interconnect 63 c are formed over and electrically connected to the first doped region 62 a and the third doped region 62 c, respectively. The first interconnect 63 a and the third interconnect 63 b may be formed in a specific order or at the same time. The interconnects may be formed separately, concurrently, or partially concurrently. The disclosure does not limit the order of forming the interconnects, and one may make a plan in consideration of the process requirement, the minimal production cost or the shortest production time.

Subsequently, as shown in FIG. 11D, a first bit line BL1 electrically connected to the first interconnect 63 a and a second bit line BL2 electrically connected to the third interconnect 63 c are formed. The ferroelectric memory cells in the same column connect to a common first bit line BL1, and also the ferroelectric memory cells in the same column connect to a common second bit line BL2. In other words, the bit lines BL1 and BL2 extend along the column direction. In the array structure, for making the first bit line BL1 and the second bit line BL2 staggered, the first bit line BL1 and the second bit line BL2 are arranged at different heights in the embodiment. For example, the position of the second bit line BL2 is higher than the position of the first bit line BL1. To establish electrical connections, it is necessary to correspondingly pad the height of a specific interconnect, but the present disclosure does not limit the arrangement order of the heights of the interconnects. It is feasible to lay out the relative position and forming sequence of the first bit line BL1 and the second bit line BL2 according to manufacturing process schedule. Parallel lines may have the same height and be formed simultaneously.

Then, as shown in FIG. 11E, a second interconnect 63 b is formed over and electrically connected to the second doped region 62 b. The top end of the second interconnect 63 b exceeds the upper surface of the bit lines BL1 and BL2 or is at least flush with the upper surface of the higher bit line. FIG. 12B shows the top view of a part of the structure at this moment. For clarity, the bit lines BL1 and BL2 are hidden. It can be seen that in the same column of ferroelectric memory cells, the first interconnects 63 a, the second interconnects 63 b and the third interconnects 63 c are staggered along the row direction so as to prevent the non-corresponding first interconnects 63 a, second interconnects 63 b and third interconnects 63 c from contacting the first bit line BL1, the second bit line BL2, the ferroelectric capacitor, the plate line and the which will be formed later.

Then, as shown in FIG. 11F, a ferroelectric capacitor 65 is formed. The ferroelectric capacitor 65 includes a first capacitor electrode 651, a second capacitor electrode 652 and a second dielectric layer 653 which separates the first capacitor electrode 651 from the second capacitor electrode 652. The first capacitor electrode 651 is electrically connected to the second interconnect 63 b. Lastly, a plate line PL is formed and electrically connected to the second capacitor electrode 652 of the ferroelectric capacitor 65. The ferroelectric memory cells in the same column connect to a common plate line PL. In other words, the plate line PL extends along the column direction. Thus, the ferroelectric memory 30 having the array structure as shown in FIG. 3 is finished. The ferroelectric memory 30 includes a plurality of ferroelectric memory cells 300 arranged in an array. After the above steps, associated processes of back-end-of-line (BEOL) can be performed.

The manufacturing processes in the foregoing embodiments are illustrated only in connection with each component capable of forming electric connection, and blank portions in the drawings will be isolated and protected by using insulation materials. Forming of the insulation materials is interposed into each of the aforementioned steps and may involve steps of depositing, patterning, etching, filling and etc. A person skilled in the art may understand these processes by deriving from his knowledge, so detailed description shall not be given here.

In the description, the column direction and the row direction are used to illustrate the array structure of the ferroelectric memory and are not used to limit the directions of the elements. The column direction and the row direction are interchangeable in the applications.

The ferroelectric capacitor of the ferroelectric memories in the above embodiments may have a traditional capacitor structure, e.g. a parallel-plate capacitor having two metallic plates separated by a dielectric medium wherein the dielectric medium is made of a ferroelectric material. The present disclosure further provides a capacitor structure. Please refer to FIG. 13 which illustrates a side cross-sectional view of a capacitor structure according to an embodiment of the present disclosure. The capacitor structure 70 includes a first capacitor electrode 71, a second capacitor electrode 72 and a dielectric layer 73 interposed between the two capacitor electrodes 71 and 72. The second capacitor electrode 72 includes a pillar structure, wherein the cross section of the top portion of the pillar structure is circular or square. The dielectric layer 73 covers the lateral surface 72 a and the bottom surface 72 b of the second capacitor electrode 72. The top surface 72 c of the second capacitor electrode 72 is exposed from the upper opening 73 c of the dielectric layer 73. The dielectric layer 73 further includes a flange 73 d which neighbors with the upper opening 73 c and extends along a direction away from the second capacitor electrode 72. The first capacitor electrode 71 covers the lateral surface 73 a and the bottom surface 73 b of the dielectric layer 73. The flange 73 d of the dielectric layer 73 covers the top surface 71 c of the first capacitor electrode 71. The plate line PL described in the above embodiments is in contact with the exposed top surface 72 c of the second capacitor electrode 72 at the upper opening 73 c of the dielectric layer 73. With limited base area, this type of capacitor structure can provide a larger surface area of the capacitor electrodes to increase the capacitance.

The first capacitor electrode 71 and the second capacitor electrode 72 of the capacitor structure 70 (or a parallel-plat capacitor structure) may be made of TiN, TaN, WN, W, Ir, Ru, RuOx, Pt, Pd or other conductive material. The material of the dielectric layer 73 may be a ferroelectric material. Some manufacturing methods of certain special ferroelectric materials are given in below description.

Please refer to FIG. 14, a schematic diagram illustrating the manufacturing method of the ferroelectric layer according to an embodiment of the present disclosure. For example, the ferroelectric layer is made of a Ti_(x)Zr(_(1-x))O_(y) ferroelectric material doped with Al/Si, wherein the doping concentration ranges from 1% to 15%, preferably from 1% to 5%. The ferroelectric layer is formed by atomic layer deposition (ALD). The titanium dioxide (TiO₂) films and the zirconium dioxide (ZrO₂) films in the form of single atomic films are grown layer by layer repeatedly or alternately. By controlling the number of the TiO₂ film(s) and the ZrO₂ film(s) in each ALD cycle, the x value and the y value can be adjusted. For example, the x value ranges from 0.25 to 0.75, preferably from 0.4 to 0.6; and the y value ranges from 1.8 to 2.2, preferably from 1.9 to 2.1. By means of this manufacturing method, the thickness of the formed dielectric layer which is applied to the ferroelectric capacitor can be reduced to a range from 5 nm to 30 nm, even 5 nm to 15 nm.

In the embodiment shown in FIG. 14, the ratio of the number of the TiO₂ films to the number of the ZrO₂ films is 1:1. That is, the TiO₂ films and the ZrO₂ films are alternately deposited. One TiO₂ film and one ZrO₂ film constitute a process cycle, and the TiO₂ film and the ZrO₂ film are not limited as a top layer and a lower layer or as a lower layer and a top layer. In the meantime, the x value is 0.5 and the y value is 2. If the ratio of the number of the TiO₂ film(s) in each process cycle increases, the x value is greater than 0.5. On the contrary, if the ratio of the number of the ZrO₂ film(s) in each process cycle increases, the x value is smaller than 0.5. After several process cycles, at least one aluminum oxide (Al₂ 0 ₃) film or at least one SiO₂ film may be formed. In this embodiment, one Al₂ 0 ₃ film or one SiO₂ film is inserted after every four ALD cycles. Thus, the doping concentration of Al or Si is about 11%. When the number of cycles for stacking films is larger than ten, the doping concentration of Al or Si is smaller than 5%.

For forming the TiO₂ films, the ZrO₂ films, the Al₂ 0 ₃ films and/or the SiO₂ films, the oxidant may be ozone (O₃) or water (H₂O). The precursor for forming the TiO₂ films may be tetrakis(ethylmethylamino)titanium (TEMATi), tetrakis(dimethylamino) titanium (TDMATi) or titanium tetrachloride (TiCl₄), and the deposition temperature (reaction temperature) ranges from 150° C. to 400° C. The precursor for forming the ZrO₂ films may be tetrakis(ethylmethylamino)zirconium (TEMAZ), tetrakis(dimethylamino) zirconium (TDMAZ) or zirconium(IV) chloride (ZrCl₄), and the deposition temperature (reaction temperature) ranges from 150° C. to 400° C. The precursor for forming the Al₂ 0 ₃ films may be trimethylaluminum (TMA) or aluminum chloride (AlCl₃), and the deposition temperature (reaction temperature) ranges from 150° C. to 400° C. The precursor for forming the SiO₂ films may be tetrakis(dimethylamino)silane (4DMAS), tris(dimethylamino)silane (3DMAS), silicon tetrachloride (SiCl₄) or tetrakis(ethylmethylamino)silane (TEMA-Si), and the deposition temperature (reaction temperature) ranges from 150° C. to 400° C.

By this manufacturing method, the ferroelectric layer has more stable characteristics because the precision of the ALD method can be controlled at an atomic level. In addition, the ferroelectric layer also has the property of being conformal, so that doping concentration variation, thickness variation, temperature variation and stress variation, which are common in fabrication processes of a large size wafer, will have better tolerance.

The dopants Al or Si in the above embodiments may be replaced by Ti or Ta to adjust or reduce the coercive field (Ec). Please refer to FIG. 15, a schematic diagram illustrating the composition of the ferroelectric layer according to another embodiment of the disclosure. For example, the ferroelectric layer of the ferroelectric capacitor is made of a Ti_(x)Zr(_(1-x))O_(y) ferroelectric material doped with Ti or Ta, wherein the doping concentration ranges from 1% to 15%, preferably from 1% to 5%. The ferroelectric layer is formed by ALD. TiO₂ and ZrO₂ in the form of single atomic films are grown layer by layer repeatedly or alternately. By controlling the number of the TiO₂ films and the ZrO₂ films in each process cycle, the x value and the y value can be adjusted. For example, the x value ranges from 0.25 to 0.75, preferably from 0.4 to 0.6; and the y value ranges from 1.8 to 2.2, preferably from 1.9 to 2.1.

In the embodiment of FIG. 15, the ratio of the number of the TiO₂ films to the number of the ZrO₂ films is 1:1. That is, the TiO₂ films and the ZrO₂ films are alternately deposited. This disclosure is not limited to the case that the top layer is the TiO₂ film or the ZrO₂ in a process cycle. In the meantime, the x value is 0.5 and the y value is 2. If the ratio of the number of the TiO₂ film(s) in each process cycle increases, the x value is greater than 0.5. On the contrary, if the ratio of the number of the ZrO₂ film(s) in each process cycle increases, the x value is smaller than 0.5. After several process cycles, at least one TiN film or at least one TaN film may be formed. In this embodiment, one TiN film or one TaN film is inserted after every four process cycles. Thus, the doping concentration of Ti or Ta is about 11%. When the number of cycles for stacking films is larger than ten, the doping concentration of Ti or Ta is smaller than 5%.

For forming the TiO₂ films and the ZrO₂ films, the oxidant may be 0 ₃ or H₂O, and the precursors and deposition temperature (reaction temperature) may refer to the above embodiments. For forming the TiN films or the TaN films, the nitrogen donating medium may be ammonia (NH₃). The precursor for forming the TiN films may be TiCl₄ or tetrakis(diethylamino)titanium (TDEAT), and the deposition temperature (reaction temperature) ranges from 200° C. to 500° C. The precursor for forming the TaN films may be tantalum(V) chloride (TaCl₅), tantalum(V) fluoride (TaF₅) or tantalum(V) bromide (TaBr₅), and the deposition temperature (reaction temperature) ranges from 200° C. to 500° C. By this manufacturing method, the formed ferroelectric layer identically has the advantage of being of stable characteristics.

Besides, the ferroelectric layer may be made of Zr_(0.8x)Si_(0.2x)Ti_((1-x))O_(y) ferroelectric material. First, by ALD, the Zr_(0.8)Si_(0.2)O₂ films containing 20% Si is formed. The precursor for donating Zr may be TEMAZ, TDMAZ or ZrCl₄; the precursor for donating Si may be 4DMAS, 3DMAS, SiCl₄ or TEMA-Si; the oxidant may be O₃ or H₂O; and the deposition temperature (reaction temperature) ranges from 300° C. to 400° C. Then, using ALD to deposit the Zr_(0.8)Si_(0.2)O₂ films and the TiO₂ films according to a specific ratio so as to form Zr_(0.8x)Si_(0.2x)Ti_((1-x))O_(y). The precursor for forming the TiO₂ films may be TEMATi, TDMATi or TiCl₄, and the deposition temperature (reaction temperature) ranges from 300° C. to 400° C. By controlling the number of the films in each process cycle, the x value and the y value can be adjusted. For example, the x value ranges from 0.25 to 0.75, preferably from 0.4 to 0.6; and the y value ranges from 1.8 to 2.2, preferably from 1.9 to 2.1.

In the embodiment shown in FIG. 16A, the ratio of the number of the Zr_(0.8)Si_(0.2)O₂ films to the number of the TiO₂ films is 1:1. That is, the Zr_(0.8)Si_(0.2)O₂ films and the TiO₂ films are alternately deposited. This disclosure does not limit the Zr_(0.8)Si_(0.2)O₂ film and the TiO₂ film as a top layer and a lower layer or as a lower layer and a top layer in a process cycle. In this embodiment, the x value is 0.5 and the y value is 2, and the doping concentration of Si is 10%. If the ratio of the number of the Zr_(0.8)Si_(0.2)O₂ film(s) in each process cycle increases, the x value is greater than 0.5, and the doping concentration of Si is greater than 10%. On the contrary, if the ratio of the number of the TiO₂ film(s) in each process cycle increases, the x value is smaller than 0.5, and the doping concentration of Si is smaller than 10%. In the embodiment of FIG. 16B, the ratio of the number of the Zr_(0.8x)Si_(0.2)O₂ films to the number of the TiO₂ films is 1:2. In that case, the x value is 0.33 and the y value is 2, and the doping concentration of Si is 6.6%. The Si component can adjust or increase the coercive field.

In addition, the ferroelectric layer may be made of a Zr_(0.9x)Si_(0.1x)Ti_((1-x))O_(y) ferroelectric material or a Zr_(0.95)Si_(0.05)Ti_((1-x))O_(y) ferroelectric material. The manufacturing method can be modified with reference to FIG. 16A and FIG. 16B, and repetitious details are not given here.

The dielectric layer 73 of the capacitor structure 70 (or a parallel-plate capacitor structure) may be made of a para-ferroelectric layer. Please refer to FIG. 17, a schematic diagram illustrating a manufacturing method of the capacitor structure according to an embodiment of the present disclosure, wherein a para-ferroelectric layer is used as the dielectric layer 73. A parallel-plate capacitor is shown in the drawing, but other capacitor structures having different shapes (e.g. the capacitor structure in FIG. 13) are also applicable. At first, a first capacitor electrode 81, a para-electric layer 831, a ferroelectric layer 832 and a second capacitor electrode 82 are piled up and formed sequentially. Then, a rapid thermal annealing process (RTA) is performed to combine and transform the para-electric film 831 and the ferroelectric layer 832 into a para-ferroelectric layer 83. Before forming the second capacitor electrode 82, an annealing process is performed on the first capacitor electrode 81, the para-electric layer 831 and the ferroelectric layer 832 in a high-pressure oxygen (O₂) atmosphere. After forming the second capacitor electrode 82, an annealing process is performed on the first capacitor electrode 81, the para-electric layer 831, the ferroelectric layer 832 and the second capacitor electrode 82 in a high-pressure hydrogen (H₂)/deuterium (D₂) atmosphere. Thus, atoms in the para-electric layer 831 will interdiffuse with atoms in the ferroelectric layer 832, which results in a charge storage structure, to form the para-ferroelectric layer 83.

Specifically, in one embodiment, the step of performing the annealing process in a high-pressure O₂ atmosphere is conducted at a temperature of 250° C.˜500° C. and in an O₂ atmosphere of 5 atm˜25 atm, and the annealing process takes 1 hr˜3 hr. The step of performing the high-pressure H₂/D₂ annealing process is conducted at a temperature of 250° C.˜500° C. and in an H₂/D₂ atmosphere of 5 atm˜25 atm, and the annealing process takes 1 hr˜3 hr.

The para-electric layer 831 may be formed by depositing and piling up Hf_(0.5)Si_(0.5)O₂ films and HfO₂ films. First, by ALD, the Hf_(0.5)Si_(0.5)O₂ films containing 50% Si is formed. For forming the Hf_(0.5)Si_(0.5)O₂ films, the precursor for donating Hf may be tetrakis(ethylmethylamino)hafnium (TEMAH), tetrakis(dimethylamino) hafnium (TDMAH) or hafnium tetrachloride (HfCl₄); the precursor for donating Si may be 4DMAS, 3DMAS, SiC1₄ or TEMA-Si; the oxidant may be O₃ or H₂O; and the deposition temperature (reaction temperature) ranges from 300° C. to 400° C. Then, using ALD to deposit the Hf_(0.5)Si_(0.5)O₂ films and the HfO₂ films according to a specific ratio. For forming the HfO₂ films, the precursor may be TEMAH, TDMAH or HfCl₄; and the deposition temperature (reaction temperature) ranges from 300° C. to 400° C. The number of the Hf_(0.5)Si_(0.5)O₂ film(s) and the HfO₂ film(s) in each process cycle is adjusted according to practical requirements. For example, in an embodiment shown in FIG. 18A, the ratio of the number of the Zr_(0.5)Si_(0.5)O₂ films to the number of the HfO₂ films is 1:1. That is, the Zr_(0.5)Si_(0.5)O₂ films and the HfO₂ films are alternately deposited. This disclosure does not limit the Zr_(0.5)Si_(0.5)O₂ film and the HfO₂ film as a top layer and a lower layer or as a lower layer and a top layer in a process cycle. In the current case, the doping concentration of Si is 25%. In another embodiment shown in FIG. 18B, the ratio of the number of the Zr_(0.5)Si_(0.5)O₂ films to the number of the HfO₂ films is 1:5. The doping concentration of Si is 8.3%. The Si component can adjust or increase the coercive field.

FIG. 19, FIG. 20, FIG. 21A and FIG. 21B illustrate different manufacturing methods applicable to the ferroelectric layer 832. Referring to FIG. 19, the ferroelectric layer 832 is made of an Hf_(x)Zr_((1-x))O_(y) ferroelectric material doped with Al/Si, wherein the doping concentration ranges from 1% to 15%, preferably from 1% to 5%. The ferroelectric layer 832 is formed by ALD. HfO₂ and ZrO₂ in the form of single atomic films are grown layer by layer repeatedly or alternately. By controlling the number of the films in each process cycle, the x value and the y value can be adjusted. For example, the x value ranges from 0.25 to 0.75, preferably from 0.4 to 0.6; and the y value ranges from 1.8 to 2.2, preferably from 1.9 to 2.1.

In the embodiment shown in FIG. 19, the ratio of the number of the HfO₂ films to the number of the ZrO₂ films is 1:1. That is, the HfO₂ films and the ZrO₂ films are alternately deposited. One HfO₂ film and one ZrO₂ film constitute a process cycle, but the disclosure does not limit the HfO₂ film and the ZrO₂ film as a top layer and a lower layer or as a lower layer and a top layer in a process cycle. In this embodiment, the x value is 0.5 and the y value is 2. If the ratio of the number of the HfO₂ film(s) in each process cycle increases, the x value is greater than 0.5. On the contrary, if the ratio of the number of the ZrO₂ film(s) in each process cycle increases, the x value is smaller than 0.5. After several process cycles, at least one Al₂O₃ film or at least one SiO₂ film may be formed. In this embodiment, one Al₂O₃ film or one SiO₂ film is inserted after every four process cycles. Thus, the doping concentration of Al or Si is about 11%. When the number of cycles for stacking films is larger than ten, the doping concentration of Al or Si is smaller than 5%.

For forming the HfO₂ films, the ZrO₂ films the Al₂ 0 ₃ films and/or the SiO₂ films, the oxidant may be O₃ or H₂O. The precursor for forming the HfO₂ films may be TEMAH, TDMAH or HfCl₄, and the deposition temperature (reaction temperature) ranges from 150° C. to 400° C. The precursor for forming the ZrO₂ films may be TEMAZ, TDMAZ or ZrCl₄, and the deposition temperature (reaction temperature) ranges from 150° C. to 400° C. The precursor for forming the Al₂O₃ films may be TMA or AlCl₃, and the deposition temperature (reaction temperature) ranges from 150° C. to 400° C. The precursor for forming the SiO₂ films may be 4DMAS, 3DMAS, SiCl₄ or TEMA-Si, and the deposition temperature (reaction temperature) ranges from 150° C. to 400° C.

The dopants Al or Si in the above embodiments may be replaced by Ti or Ta to adjust or reduce the coercive field. Referring to FIG. 20, the ferroelectric layer 832 is made of, for example, an Hf_(x)Zr_((1-x))O_(y) ferroelectric material doped with Ti/Ta, wherein the doping concentration ranges from 1% to 15%, preferably from 1% to 5%. The ferroelectric layer 832 is formed by ALD. HfO₂ and ZrO₂ in the form of single atomic films are grown layer by layer repeatedly or alternately. By controlling the number of the films in each process cycle, the x value and the y value can be adjusted. For example, the x value ranges from 0.25 to 0.75, preferably from 0.4 to 0.6; and the y value ranges from 1.8 to 2.2, preferably from 1.9 to 2.1.

In the embodiment of FIG. 20, the ratio of the number of the HfO₂ films to the number of the ZrO₂ films is 1:1. That is, the HfO₂ films and the ZrO₂ films are alternately deposited. One HfO₂ film and one ZrO₂ film constitute a process cycle, and the disclosure does not limit the HfO₂ film and the ZrO₂ film as a top layer and a lower layer or as a lower layer and a top layer in a process cycle. In this embodiment, the x value is 0.5 and the y value is 2. If the ratio of the number of the HfO₂ film(s) in each process cycle increases, the x value is greater than 0.5. On the contrary, if the ratio of the number of the ZrO₂ film(s) in each process cycle increases, the x value is smaller than 0.5. After several ALD cycles, at least one TiN film or at least one TN film may be formed. In this embodiment, one TiN film or one TN film is inserted after every four process cycles. Thus, the doping concentration of Ti or Ta is about 11%. When the number of cycles for stacking films is larger than ten, the doping concentration of Ti or Ta is smaller than 5%.

For forming the HfO₂ films and the ZrO₂ films, the oxidant may be O₃ or H₂O, and the precursors and deposition temperature (reaction temperature) may refer to the above embodiments. For forming the TiN films or the TaN films, the nitrogen donating medium may be NH₃, and the precursors and deposition temperature (reaction temperature) may refer to the above embodiments. By this manufacturing method, the ferroelectric layer identically has the advantage of being of stable characteristics.

Besides, the ferroelectric layer 832 may be made of an Hf_(0.8x)Si_(0.2x)Zr_((1-x))O_(y) ferroelectric material. First, by ALD, the Hf_(0.8)Si_(0.2)O₂ films containing 20% Si is formed. The precursor for donating Hf may be TEMAH, TDMAH or HfCl₄; the precursor for donating Si may be 4DMAS, 3DMAS, SiCl₄ or TEMA-Si; the oxidant may be O₃ or H₂O; and the deposition temperature (reaction temperature) ranges from 300° C. to 400° C. Then, using ALD to deposit Hf_(0.8x)Si_(0.2x)O₂ films and the ZrO₂ films according to a specific ratio so as to form Hf_(0.8x)Si_(0.2x)Zr_((1-x))O_(y). The precursor for forming the ZrO₂ films may be TEMAZ, TDMAZ or ZrCl₄, and the deposition temperature (reaction temperature) ranges from 300° C. to 400° C. By controlling the number of the films in each process cycle, the x value and the y value can be adjusted. For example, the x value ranges from 0.25 to 0.75, preferably from 0.4 to 0.6; and the y value ranges from 1.8 to 2.2, preferably from 1.9 to 2.1.

In the embodiment shown in FIG. 21A, the ratio of the number of the Hf_(0.8)Si_(0.2)O₂ films to the number of the ZrO₂ films is 1:1. That is, the Hf_(0.8)Si_(0.2)O₂ films and the ZrO₂ films are alternately deposited. One Hf_(0.8)Si_(0.2)O₂ film and one ZrO₂ film constitute a process cycle, and the disclosure does not limit the Hf_(0.8)Si_(0.2)O₂ film and the ZrO₂ film as a top layer and a lower layer or as a lower layer and a top layer in a process cycle. In this embodiment, the x value is 0.5 and the y value is 2,and the doping concentration of Si is 10%. If the ratio of the number of the Hf_(0.8)Si_(0.2)O₂ film(s) in each process cycle increases, the x value is greater than 0.5, and the doping concentration of Si is greater than 10%. On the contrary, if the ratio of the number of the ZrO₂ film(s) in each process cycle increases, the x value is smaller than 0.5, and the doping concentration of Si is smaller than 10%. In the embodiment of FIG. 21B, the ratio of the number of the Hf_(0.8)Si_(0.2)O₂ films to the number of the ZrO₂ films is 1:2. In this embodiment, the x value is 0.33 and the y value is 2, and the doping concentration of Si is 6.6%. The Si component can adjust or increase the coercive field.

In addition, the ferroelectric layer 832 may be made of an Hd_(0.9x)Si_(0.1x)Zr_((1-x))O_(y) ferroelectric material or an Hd_(0.95x)Si_(0.05x)Zr_((1-x))O_(y) ferroelectric material. The manufacturing method can be known from the description with reference to FIG. 21A and FIG. 21B, and repetitious details are not given here.

In summary, the present disclosure provides a ferroelectric memory which may not use FeFETs as switches, so the ferroelectric memory is less affected by operational voltages. The present disclosure further provides the data writing method, the data reading method, the manufacturing method of the ferroelectric memory, the structure of the ferroelectric capacitor and the manufacturing method of ferroelectric capacitor, for supporting manufacturing and operation of the ferroelectric memory, so as to have the techniques provided in the disclosure become practically applicable solutions.

While the disclosure has been described in terms of what is presently considered to be the most practical and preferred embodiments, it is to be understood that the invention needs not be limited to the disclosed embodiment. On the contrary, it is intended to cover various modifications and similar arrangements included within the spirit and scope of the appended claims which are to be accorded with the broadest interpretation so as to encompass all such modifications and similar structures. 

What is claimed is:
 1. A ferroelectric memory comprising a plurality of ferroelectric memory cells, a selected one of the ferroelectric memory cells being electrically connected to a first bit line, a second bit line, a first word line, a second word line and a plate line, the selected ferroelectric memory cell comprising: a first field effect transistor comprising a control terminal, a first access terminal and a second access terminal; a second field effect transistor comprising a control terminal, a first access terminal and a second access terminal; and a ferroelectric capacitor comprising a first capacitor electrode and a second capacitor electrode, wherein the control terminal and the first access terminal of the first field effect transistor are respectively electrically connected to the first word line and the first bit line, the second access terminal of the first field effect transistor is electrically connected to the first capacitor electrode of the ferroelectric capacitor and the second access terminal of the second field effect transistor, the second capacitor electrode of the ferroelectric capacitor is electrically connected to a plate line, the control terminal and the first access terminal of the second field effect transistor are respectively electrically connected to the second word line and the second bit line.
 2. The ferroelectric memory according to claim 1, wherein the first field effect transistor and the second field effect transistor are non-ferroelectric field effect transistors.
 3. The ferroelectric memory according to claim 1, wherein the ferroelectric capacitor comprises: the second capacitor electrode comprising a pillar structure; a dielectric layer covering a lateral surface and a bottom surface of the second capacitor electrode, a top surface of the second capacitor electrode being exposed from an upper opening of the dielectric layer, the dielectric layer further comprising a flange, the flange neighboring with the upper opening and extending along a direction away from the second capacitor electrode; and the first capacitor electrode covering a lateral surface and a bottom surface of the dielectric layer, the flange of the dielectric layer covering a top surface of the first capacitor electrode.
 4. The ferroelectric memory according to claim 1, wherein the ferroelectric capacitor comprises a dielectric layer sandwiched between the first capacitor electrode and the second capacitor electrode, and the dielectric layer is a ferroelectric layer or a para-ferroelectric layer.
 5. The ferroelectric memory according to claim 4, wherein the ferroelectric layer is made of a Zr_(0.8x)Si_(0.2x)Ti_((1-x))O_(y) ferroelectric material, a Zr_(0.9x)Si_(0.1x)Ti_((1-x))O_(y) ferroelectric material, a Zr_(0.95x)Si_(0.05x)Ti_((1-x))O_(y) ferroelectric material or a Ti_(x)Zr_((1-x)), O_(y) ferroelectric material doped with Al, Si, Ti or Ta, wherein x ranges from 0.25 to 0.75 and y ranges from 1.8 to 2.2.
 6. The ferroelectric memory according to claim 5, wherein a doping concentration of Al, Si, Ti or Ta ranges from 1% to 15%.
 7. The ferroelectric memory according to claim 4, wherein the para-ferroelectric layer is made from a ferroelectric material and a para-electric material.
 8. The ferroelectric memory according to claim 7, wherein the ferroelectric material is an Hf_(0.8x)Si_(0.2x)Zr_((1-x))O_(y) ferroelectric material, an Hf_(0.9x)Si_(0.1x)Zr_((1-x))O_(y) ferroelectric material, an Hf_(0.95x)Si_(0.05x)Zr_((1-x))O_(y) ferroelectric material or an Hf_(x)Zr_(o(1-x))O_(y) ferroelectric material doped with Al, Si, Ti or Ta, wherein x ranges from 0.25 to 0.75, y ranges from 1.8 to 2.2 and a doping concentration of Al, Si, Ti or Ta ranges from 1% to 15%.
 9. The ferroelectric memory according to claim 7, wherein the para-electric material is a combination of HfO₂ films and Hf_(0.5)S_(0.5)O₂ films.
 10. A capacitor structure, comprising: a second capacitor electrode comprising a pillar structure; a dielectric layer covering a lateral surface and a bottom surface of the second capacitor electrode, a top surface of the second capacitor electrode being exposed from an upper opening of the dielectric layer, the dielectric layer further comprising a flange, the flange neighboring with the upper opening and extending along a direction away from the second capacitor electrode; and a first capacitor electrode covering a lateral surface and a bottom surface of the dielectric layer, the flange of the dielectric layer covering a top surface of the first capacitor electrode.
 11. The capacitor structure according to claim 10, wherein the dielectric layer of the capacitor structure is a ferroelectric layer or a para-ferroelectric layer.
 12. The capacitor structure according to claim 11, wherein the ferroelectric layer is made of a Zr_(0.8x)Si_(0.2x)Ti_((1-x))O_(y) ferroelectric material, a Zr_(0.9x)Si_(0.1x)Ti_((1-x))O_(y) ferroelectric material, a Zr_(0.95x)Si_(0.05x)Ti_((1-x))O_(y) ferroelectric material or a Ti_(x)Zr_((1-x))O_(y) ferroelectric material doped with Al, Si, Ti or Ta, wherein x ranges from 0.25 to 0.75 and y ranges from 1.8 to 2.2.
 13. The capacitor structure according to claim 12, wherein a doping concentration of Al, Si, Ti or Ta ranges from 1% to 15%.
 14. The capacitor structure according to claim 11, wherein the para-ferroelectric layer is made from a ferroelectric material and a para-electric material.
 15. The capacitor structure according to claim 14, wherein the ferroelectric material is an Hf_(0.8x)Si_(0.2x)Zr_((1-x))O_(y) ferroelectric material, an Hf_(0.9x)Si_(0.1x)Zr_((1-x))O_(y) ferroelectric material, an Hf_(0.95x)Si_(0.05x)Zr_((1-x))O_(y) ferroelectric material or an Hf_(x)Zr_((1-x))O_(y) ferroelectric material doped with Al, Si, Ti or Ta, wherein x ranges from 0.25 to 0.75, y ranges from 1.8 to 2.2 and a doping concentration of Al, Si, Ti or Ta ranges from 1% to 15%.
 16. The capacitor structure according to claim 14, wherein the para-electric material is a combination of HfO₂ films and Hf_(0.5)Si_(0.5)O₂ films. 